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APT50M50L2FLL
500V 89A 0.050
POWER MOS 7
(R)
R
FREDFET
TO-264 Max
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
* Increased Power Dissipation * Easier To Drive * Popular TO-264 MAX Package * FAST RECOVERY BODY DIODE
G
D
S
All Ratings: TC = 25C unless otherwise specified.
APT50M50L2LL UNIT Volts Amps
500 89 356 30 40 893 7.14 -55 to 150 300 89 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.050 250 1000 100 3 5
(VGS = 10V, 44.5A)
Ohms A nA Volts
050-7115 Rev B 2-2004
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT50M50L2FLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 89A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 89A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 89A, RG = 3 6 INDUCTIVE SWITCHING @ 125C VDD = 333V VGS = 15V ID = 89A, RG = 3
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
10550 2060 105 200 50 105 24 22 56 8 1490 1650 2105 1835
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
89 356 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -89A)
5
dv/
t rr
Reverse Recovery Time (IS = -89A, di/dt = 100A/s) Reverse Recovery Charge (IS = -89A, di/dt = 100A/s) Peak Recovery Current (IS = -89A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
300 600 2.6 10 17 34
TYP MAX
Q rr IRRM
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.14 40
4 Starting Tj = +25C, L = 0.81mH, RG = 25, Peak IL = 89A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -89A di/dt 700A/s VR 500V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.16
, THERMAL IMPEDANCE (C/W)
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.14 0.9 0.12 0.10 0.08 0.06 0.3 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 1.0 0.7
0.5
Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
050-7115 Rev B 2-2004
Z
JC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
200 180
ID, DRAIN CURRENT (AMPERES)
APT50M50L2FLL
15 &10V 7.5V 7V
160 140 120 100 80 60 40 20 0
RC MODEL Junction temp. (C) 0.0622 Power (watts) 0.0778 Case temperature. (C) 0.209F 0.0191F
6.5V
6V
5.5V 5V
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 180 160
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4
V
GS
NORMALIZED TO = 10V @ I = 44.5A
D
1.3 1.2
140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 90 80 TJ = -55C TJ = +125C TJ = +25C
1.1 VGS=10V 1.0 VGS=20V 0.9 0.8 0 40 60 80 100 120 140 160 180 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 20
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I
D
ID, DRAIN CURRENT (AMPERES)
1.10
70 60 50 40 30 20 10 0 25
1.05
1.00
0.95
0.90 0.85 -50
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
= 44.5A V
GS
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
= 10V
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.1 1.0 0.9 0.8 0.7
050-7115 Rev B 2-2004
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6 -50
-25
APT50M50L2FLL
356
OPERATION HERE LIMITED BY RDS (ON)
30,000 10,000
C, CAPACITANCE (pF)
Ciss
ID, DRAIN CURRENT (AMPERES)
100 100S Coss 1,000
10 1mS 10mS
100
Crss
1
TC =+25C TJ =+150C SINGLE PULSE
1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
= 89A
100 TJ =+150C TJ =+25C
12
VDS=100V VDS=250V VDS=400V
8
10
4
50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 100 90 80
td(on) and td(off) (ns)
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 180
V
DD G
= 333V
td(off)
160 140
R
= 3
T = 125C
J
tf
L = 100H
70 60 50 40 30 20 10 0 10
V
DD G
= 333V
120
tr and tf (ns)
R
= 3
T = 125C
J
100 80 60 40 tr
L = 100H
td(on)
20 70 90 110 130 150 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 9000
V
DD
70 90 110 130 150 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
DD G
30
50
0 10
30
50
4000 3500
SWITCHING ENERGY (J)
V
= 333V
= 333V
R
= 3
8000
SWITCHING ENERGY (J)
I
D J
= 89A
T = 125C
J
T = 125C
3000 2500 2000 1500 1000 500
L = 100H E ON includes diode reverse recovery.
7000 6000 5000 4000 3000 2000 1000 0
Eoff
L = 100H E ON includes diode reverse recovery.
Eon
050-7115 Rev B 2-2004
Eon
Eoff
70 90 110 130 150 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 10
30
50
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
APT50M50L2FLL
10 %
Gate Voltage
90%
TJ = 125 C
Gate Voltage
td(on) tr
t
T = 125 C J
d(off)
90%
Drain Voltage
90%
Drain Current
10 %
5%
Drain Voltage
t f 10% 0
Switching Energy Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DF60
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264 MAXTM(L2) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807)
5.79 (.228) 6.20 (.244)
Drain
25.48 (1.003) 26.49 (1.043)
2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7115 Rev B 2-2004
Gate Drain Source

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